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We provide electrical projects based on power electronics, MATLAB Simulink and SIM Power
For Electronics Engineering Students we support technologies like ARM, GSM, GPS, RFID, Robotics, VLSI, NSL, NS3, OMNet++, OPNet, QUALNET, PeerSim
Modeling of extrinsic parasitic elements of Si based GaN HEMTs using two step de-embedding structures A new parasitic elements extraction technique for GaN HEMT transistors on Si substrate is presented. This technique is based on the use of two de-embedding GaN structures: open and thru-short. The equivalent circuit models along with the extraction procedure are detailed. A very good agreement between measurements and simulations validate the developed extraction method.