More Videos...
 

1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films

1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films A 1T-1R pillar-type “topological-switching RAM” (TRAM) and the data retention of GeTe/Sb2Te3 super-lattice were investigated. Reset voltage of TRAM, 2 V, was 40 % of that of the conventional PCM with Ge2Sb2Te5. From data retention evaluation, the TRAM was found to endure the retention at 260 °C for 18 hours.

Recent Projects

More +