APEC Guides Engineers to Latest Advances in Power Devices, Components, and Packaging: High-voltage gallium nitride transistors and the new generation of digital controllers

APEC Guides Engineers to Latest Advances in Power Devices, Components, and Packaging: High-voltage gallium nitride transistors and the new generation of digital controllers Continuing its long-standing tradition of addressing issues of immediate and long-term interest to practicing power electronics engineers, the IEEE Applied Power Electronics Conference and Exposition (APEC) celebrated its 30th anniversary this year in Charlotte, North Carolina, 15-19 March. While many advances and innovations in areas ranging from power semiconductor devices to circuit components and packaging were presented, two key trends took center stage: the availability of high-voltage gallium nitride (GaN) transistors with improved reliability, among other widebandgap devices, and the new generation of digital controllers for smooth transition from analog to digital powermanagement in dc-dc and ac-dc power converters. In addition, the Power Sources Manufacturers Association (PSMA) presented its technology report on three-dimensional (3-D) power packaging with a focus on embedded substrate technologies.