Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode

Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode The TiSi_x/n-Si(100) Schottky power diode is fabricated by Ti silicidation, and the Schottky barrier height (SBH) is found to be ~ 0.69 eV. For the first time, it is demonstrated that an 80 meV SBH reduction can be achieved by a TiN capping layer, which can lower ~15% self power consumption of the diode at a forward current of 20 A. It is revealed that the nitrogen atoms’ diffusion into the TiSix results in the SBH lowering, which is discovered by X-ray diffraction measurement, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy.