Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO₂ (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of I_DS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.