Highly Sensitive Nanotesla Quantum-Well Hall-Effect Integrated Circuit Using GaAs–InGaAs–AlGaAs 2DEG

Highly Sensitive Nanotesla Quantum-Well Hall-Effect Integrated Circuit Using GaAs–InGaAs–AlGaAs 2DEG This paper reports on the first low power (10.4 mW) and ultrasensitive linear Hall-effect integrated circuits (LHEICs) using GaAs-InGaAs-AlGaAs 2D electron gas technology. These LHEICs have a state-of-the-art sensitivity of 533 μV/μT and are capable of detecting magnetic fields as low as 177 nT (in a 10-Hz bandwidth), at frequencies from 500 Hz to 200 kHz. This provides at least an order of magnitude improvement in sensitivity and a factor of four improvements in detectability of small fields, compared with commercial Si linear Hall ICs.